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硅纳米电极超低电压场致电离特性研究

陈云 张健 于江江 郑小东

陈云, 张健, 于江江, 郑小东. 硅纳米电极超低电压场致电离特性研究[J]. 华东师范大学学报(自然科学版), 2013, (3): 194-201.
引用本文: 陈云, 张健, 于江江, 郑小东. 硅纳米电极超低电压场致电离特性研究[J]. 华东师范大学学报(自然科学版), 2013, (3): 194-201.
CHEN Yun, ZHANG Jian, YU Jiang-jiang, ZHENG Xiao-dong. Ultralow-voltage field ionization of silicon nano-electrode[J]. Journal of East China Normal University (Natural Sciences), 2013, (3): 194-201.
Citation: CHEN Yun, ZHANG Jian, YU Jiang-jiang, ZHENG Xiao-dong. Ultralow-voltage field ionization of silicon nano-electrode[J]. Journal of East China Normal University (Natural Sciences), 2013, (3): 194-201.

硅纳米电极超低电压场致电离特性研究

详细信息
  • 中图分类号: O47

Ultralow-voltage field ionization of silicon nano-electrode

  • 摘要: 用湿法化学刻蚀制备出具有直立结构的硅纳米线,其平均长度为20 m,平均直径100 nm.将该硅纳米线作为电容式电离结构的一维纳米电极,建立场致电离的测试系统,并在常温常压下测试出电离的全伏安特性,得出了一维纳米电极系统气体电离的规律.测试结果表明,利用湿法化学刻蚀制备的硅纳米线作为一维纳米电极,可以大大降低系统的击穿电压,原因在于它具有较高的场增强因子、小尺寸效应以及高的缺陷密度.
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出版历程
  • 收稿日期:  2012-09-01
  • 修回日期:  2012-12-01
  • 刊出日期:  2013-05-25

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