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含单势垒量子隧穿结构电子稳恒输运中的接点效应

田英 全军

田英, 全军. 含单势垒量子隧穿结构电子稳恒输运中的接点效应[J]. 华东师范大学学报(自然科学版), 2013, (3): 186-193.
引用本文: 田英, 全军. 含单势垒量子隧穿结构电子稳恒输运中的接点效应[J]. 华东师范大学学报(自然科学版), 2013, (3): 186-193.
TIAN Ying, QUAN Jun. Contact effect of quantum tunneling structure with single barrier in dc electron transport[J]. Journal of East China Normal University (Natural Sciences), 2013, (3): 186-193.
Citation: TIAN Ying, QUAN Jun. Contact effect of quantum tunneling structure with single barrier in dc electron transport[J]. Journal of East China Normal University (Natural Sciences), 2013, (3): 186-193.

含单势垒量子隧穿结构电子稳恒输运中的接点效应

详细信息
  • 中图分类号: 0469

Contact effect of quantum tunneling structure with single barrier in dc electron transport

  • 摘要: 基于散射矩阵理论和费米-托马斯近似,通过对含单势垒的量子隧穿结构的研究,得到了稳恒输运中介观结构的电导特性. 结果表明, 稳恒条件下接触效应对介观体系中的电子透射以及内部特征势有明显的影响;电势降所呈现的电导特性与经典电路中的基尔霍夫定律相违背,整个介观体系的电阻不能简单地视为接触电阻和散射电阻串联,必须考虑接点和介观器件间的量子相干性. 因此,接点效应对于进一步研究介观体系中的电子输运起到非常重要的作用
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出版历程
  • 收稿日期:  2012-05-01
  • 修回日期:  2012-08-01
  • 刊出日期:  2013-05-25

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