硅纳米电极超低电压场致电离特性研究

陈云; 张健; 于江江; 郑小东

硅纳米电极超低电压场致电离特性研究

1.
华东师范大学电子工程系,上海 200241;
2.
南通大学电子信息学院,江苏南通 226019

详细信息

中图分类号: O47
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出版历程
- 收稿日期: 2012-09-01
- 修回日期: 2012-12-01
- 刊出日期: 2013-05-25

Ultralow-voltage field ionization of silicon nano-electrode

1.
Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;
2.
School of Electronics and Information, Nantong University, Nantong Jiangsu 226019, China

摘要

摘要: 用湿法化学刻蚀制备出具有直立结构的硅纳米线，其平均长度为20 m，平均直径100 nm.将该硅纳米线作为电容式电离结构的一维纳米电极，建立场致电离的测试系统，并在常温常压下测试出电离的全伏安特性，得出了一维纳米电极系统气体电离的规律.测试结果表明，利用湿法化学刻蚀制备的硅纳米线作为一维纳米电极，可以大大降低系统的击穿电压，原因在于它具有较高的场增强因子、小尺寸效应以及高的缺陷密度.
- 硅纳米线 /
- 场致电离 /
- 击穿电压 /
- 湿法化学刻蚀
Abstract: By using method of wet chemical etching, a kind of straight aligned silicon nanowires (SiNWs) was prepared, with average length and diameter about 20 m and 100 nm, respectively. Then 1D SiNWs were used as the nano-electrode of capacitive ionization structure in a test system of ionization, to test the full volt ampere characteristics of ionization. The test results show that the as-grown SiNWs acting as one of the nano-electrode can reduce the breakdown voltage of power system greatly, because the as-grown SiNWs have large field enhancement factor, small size effect and high defect density.
- silicon nanowires (SiNWs) /
- field ionization /
- breakdown voltage /
- wet chemical etching

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参考文献(1)

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