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摘要: 用化学镀的方法,在100 μm BeCu丝上沉积了NiFeB薄膜镀层.研究了退火温度和驱动电流频率对样品巨磁阻抗效应的影响.观察到200 ℃退火后样品最大巨磁阻抗效应为33%.在BeCu丝与NiFeB镀层之间加入绝缘层后,最大巨磁阻抗效应提高到83%.Abstract: NiFeB films were electroless-deposited on 100 μm BeCu wires and were annealed at different temperatures in N2 atmosphere. The dependence of GMI on the annealing temperature and frequencies of driving current was studied. The maximum GMI ratio of 33% of these sample was observed by annealing at 200 ℃. After adding the insulator layer between BeCu and NiFeB layer the GMI ratio of the sample increases to 83%.
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