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摘要: 研究具有纳米级晶粒尺寸的(Sr2FeMoO6)1- x/(CeO2) x 复合材料的电输运性质.发现其低场磁致电阻效应在整个温区内要高于纯Sr2FeMoO6/CeO2多晶材料.外加磁场为2 kOe时,x=0.3的复合材料在10 K与300 K的磁致电阻分别为纯SFMO样品的1.7与1.3倍.表明载流子在晶界处的隧穿效应加强了其磁致电阻效应.Abstract: The electric transport properties of the nanostructrued (Sr2FeMoO6)1- x/(CeO2) xcomposition were investigated. It was found that the lowfield magnetoresistance of the composition is higher than that of the pure Sr2FeMoO6/CeO2 material in the whole region of temperature. The magnetoresistance ratios at 10 K and 300 K with H=2 kOe for the x =0.3 sample are 1.7 times and 1.3 times as large as that for the pureSr2FeMoO6, respectively. This means that the spin dependent tunneling at the interfaces of grain boundaries is responsible for the enhanced MR.
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Key words:
- Sol gel methodSr2FeMoO6magnetoresistance /
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