High sensitive room temperature hydrogen sensor based on Pd/SiNWs/pSi structure

ZHU Li-Si; Yang-Ting; ZHANG Jian

doi:10.3969/j.issn.1000-5641.2015.06.011

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Dec. 2015

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ZHU Li-Si, Yang-Ting, ZHANG Jian. High sensitive room temperature hydrogen sensor based on Pd/SiNWs/pSi structure[J]. Journal of East China Normal University (Natural Sciences), 2015, (6): 81-89. doi: 10.3969/j.issn.1000-5641.2015.06.011

Citation:

ZHU Li-Si, Yang-Ting, ZHANG Jian. High sensitive room temperature hydrogen sensor based on Pd/SiNWs/pSi structure[J]. Journal of East China Normal University (Natural Sciences), 2015, (6): 81-89. doi: 10.3969/j.issn.1000-5641.2015.06.011

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High sensitive room temperature hydrogen sensor based on Pd/SiNWs/pSi structure

doi: 10.3969/j.issn.1000-5641.2015.06.011

Received Date: 2014-09-03
Publish Date: 2015-11-25

Abstract

Abstract

Silicon nanowires (SiNWs) coated by palladium layer via electroless plating technique had been prepared. And the Pd/SiNWs Schottky barrier hydrogen sensors capable of operating at room temperature for the first time were conducted. Scanning electron microscopy (SEM) analysis showed that Pd thin films composed of nanoparticles were coated on the silicon nanowire surface. The 〖WTBX〗IV〖WTBZ〗 curves of Pd/SiNWs Schottky barrier hydrogen sensor were measured. The results indicated that under room temperature the sensor can sense hydrogen in a wide range of concentration. The sensing mechanism of the Pd/SiNWs barrier hydrogen sensor was also provided. The sensor developed had great potentials for the detection of hydrogen at room temperature and can be used in the cases like fuel cells application.

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References(1)

References

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