A negatively charged V<sub>Si</sub>O<sub>N</sub> center for implementation as qubit

SHEN Yu-hao; TANG Zheng; PENG Wei

doi:10.3969/j.issn.1000-5641.2017.02.013

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SHEN Yu-hao, TANG Zheng, PENG Wei. A negatively charged VSiON center for implementation as qubit[J]. Journal of East China Normal University (Natural Sciences), 2017, (2): 97-106. doi: 10.3969/j.issn.1000-5641.2017.02.013

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SHEN Yu-hao, TANG Zheng, PENG Wei. A negatively charged V_SiO_N center for implementation as qubit[J]. Journal of East China Normal University (Natural Sciences), 2017, (2): 97-106. doi: 10.3969/j.issn.1000-5641.2017.02.013

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A negatively charged V_SiO_N center for implementation as qubit

doi: 10.3969/j.issn.1000-5641.2017.02.013

1.
Key Laboratory of Polar Materials and Devices, East China Normal University, Shanghai 200241, China
2.
Information Technology Services Center, East China Normal University, Shanghai 200062, China

Received Date: 2016-03-16
Publish Date: 2017-03-25

Abstract

Abstract

γ-Si₃N₄ is a nitrogen-based ultra-hard ceramic with Si atoms occupying both tetrahedral and octahedral sites in a spinel structure. Based on first-principles calculations, we investigate spin-polarized electronic structures and energetic stabilities of oxygenvacancy complex center (V_SiO_N) consisting of a substituted oxygen atom and an adjacent tetrahedrally coordinated silicon vacancy in spinel silicon nitride (γ-Si₃N₄) with different charge states. We find that the negatively charged V_SiO_N^-1 center is stable in the p-type γ-Si₃N₄ and the defect center possesses an S=1 triplet ground state and a spin-conserved excited state with low excitation energy. By using a mean-field approximation, we estimate that the spin coherence time of V_SiO_N is 0.4 s at T=0 K, which indicates that the V_SiO_N^-1 center is a promising candidate for spin coherent manipulation and qubit operation.
- first-principles calculations,
- spin-polarized electronic structures,
- spin coherent time,
- qubit operation of color centers

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References(33)

References

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